Journal
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 24, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4812243
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Funding
- Asian Office of Aerospace Research and Development (AOARD) through the Air Force Office of Scientific Research (AFOSR) [FA2386-11-1-4077]
- National Science Foundation under ECCS [0925844]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0925844] Funding Source: National Science Foundation
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The atomic layer deposition (ALD) of HfO2 on the native oxide, NH4OH, and atomic hydrogen treated Al0.25Ga0.75N surface was studied using in situ X-ray photoelectron spectroscopy (XPS), after each individual half cycle of the ALD process. During the deposition process, minimal change in the chemical states of Ga and Al is detected, with no evidence of interfacial oxide generation. The initial HfO2 growth rate on the native oxide Al0.25Ga0.75N surface is very low, however, exposure of the Al0.25Ga0.75N surface to atomic hydrogen decreases the concentration of carbon and oxygen and enhances the HfO2 growth rate. (C) 2013 AIP Publishing LLC.
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