Journal
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4798233
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The effect of incorporating nanostructured defects in a form of BaSnO3 (BSO) nanorods on the thickness dependence of critical current density (J(c)) in GdBa2Cu3O7-x (GdBCO) thin films was investigated. Pure and 2 wt. % BSO-doped GdBCO films were fabricated by the pulsed laser deposition with the thicknesses t of both films increasing from 0.2 mu m to 1.5 mu m. The magnetization data measured at 77 K with the field being applied parallel to the c-axis of the films showed two important improvements. First, the J(c)s of the GdBCO film were significantly enhanced with the BSO addition. Second, the BSO-doped GdBCO films exhibited less formation of a-axis grains on the film surface than the pure GdBCO films. As a result, a reduced thickness dependence of J(c) was obtained for the BSO-doped GdBCO films. The two improvements may be explained by assuming that the growth of BSO nanostructured defects observed in the cross-sectional transmission electron microscopy functioned as effective artificial pinning centers. (C) 2013 American Institute of Physics.
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