Journal
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4775745
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Funding
- Engineering and Physical Sciences Research Council, UK [EP/G004447/2]
- Engineering and Physical Sciences Research Council [EP/G004447/2] Funding Source: researchfish
- EPSRC [EP/G004447/2] Funding Source: UKRI
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The incorporation of N into MBE grown GaNSb and GaInNSb is investigated. Measurements of the N fraction in GaNSb show the familiar linear dependence on inverse growth rate, followed by a departure from this at low growth rates; a similar behaviour is observed for GaInNSb. Unexpectedly, the point at which there is a departure from this linear behaviour is found to be extended to lower growth rates by the addition of small amounts of In. These results are compared to a kinetic theory-based model from which it is postulated that the change in behaviour can be attributed to an In-induced change in the characteristic surface residence lifetime of the N atoms. In addition, a method is demonstrated for growing GaInNSb lattice-matched to GaSb(001) for compositions with band gaps covering the 2-5 mu m region. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4775745]
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