Journal
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4774238
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Funding
- Nanoelectronics Research Initiative
- NSF [DMR-08-19762]
- DARPA [HR-0011-10-1-0072]
- ARO-MURI [W911NF-08-2-0032]
- National Defense Science and Engineering Graduate Fellowship
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Complex oxide epitaxial film growth is a rich and exciting field, owing to the wide variety of physical properties present in oxides. These properties include ferroelectricity, ferromagnetism, spin-polarization, and a variety of other correlated phenomena. Traditionally, high quality epitaxial oxide films have been grown via oxide molecular beam epitaxy or pulsed laser deposition. Here, we present the growth of high quality epitaxial films using an alternative approach, the pulsed electron-beam deposition technique. We demonstrate all three epitaxial growth modes in different oxide systems: Frank-van der Merwe (layer-by-layer); Stranski-Krastanov (layer-then-island); and Volmer-Weber (island). Analysis of film quality and morphology is presented and techniques to optimize the morphology of films are discussed. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4774238]
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