Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4818945
Keywords
-
Categories
Funding
- French ANR Program via the GRAAL project [Blanc 2011 BS03 004 01]
- JSPS Core-to-Core Program
- Advanced Research Networks International Collaborative Research Center on Atomically Controlled Processing for Ultralarge Scale Integration
Ask authors/readers for more resources
Tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of optoelectronic devices that are compatible with the mainstream silicon technology. Tensile-strained Ge/Si epilayers can be obtained by using the difference of thermal expansion coefficients between Ge and Si. We have combined various surface, structural, and compositional characterizations to investigate the growth mode and the strain state in Ge/Si epilayers grown by molecular-beam epitaxy. The Ge growth was carried out using a two-step approach: a low-temperature growth to produce relaxed and smooth buffer layers, which is followed by a high-temperature growth to get high quality Ge layers. The existence of a substrate temperature window from 260 to 300 degrees C is evidenced, which allows to completely suppress the Ge/Si Stranski-Krastanov growth. As a consequence of the high temperature growth, a tensile strain lying in the range of 0.22%-0.24% is obtained. Concerning the effect of thermal annealing, it is shown that cyclic annealing may allow increasing the tensile strain up to 0.30%. Finally, we propose an approach to use carbon adsorption to suppress Si/Ge interdiffusion, which represents one of the main obstacles to overcome in order to realize pure Ge-based optoelectronic devices. (C) 2013 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available