Journal
JOURNAL OF APPLIED PHYSICS
Volume 114, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4829029
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Funding
- National Natural Science Foundation of China [51002071]
- Program for New Century Excellent Talents in University
- Program for Young Talents of Science and Technology in Universities of Inner Mongolia Autonomous Region
- Innovation Program of Inner Mongolia University of Science and Technology [2012NCL011]
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1.5-mu m-thick (Pb0.91La0.09)(Zr0.65Ti0.35)O-3 (PLZT) relaxor ferroelectric (RFE) films doped by Mn from 0 to 5 mol. % were deposited on LaNiO3/Si(100) substrates via a sol-gel method. The microstructure, dielectric properties, and energy-storage performance of PLZT thin films were investigated as a function of Mn content. X-ray diffraction patterns and scanning electron microscopy indicated that all the films possessed a similar microstructure with pure perovskite phase. However, the dielectric constant, average breakdown fields, and the difference between maximum polarization and remnant polarization of the films were improved by Mn doping. A giant recoverable energy-storage density of 30.8 J/cm(3) was obtained in 1 mol. % Mn-doped films. Moreover, good temperature-dependent energy-storage stability was also observed in the films. These results indicated that Mn-doping was an efficient way to optimize the energy-storage behaviors of PLZT RFE films. (c) 2013 AIP Publishing LLC.
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