Journal
JOURNAL OF APPLIED PHYSICS
Volume 113, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4801911
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Funding
- DOE [DE-FG02-08ER46544]
- Gordon and Betty Moore Foundation
- IAMDN of Rutgers University [NSF DMR-0845464, ONR N000140910749]
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We report on the effect of exposure to atmospheric conditions on the THz conductivity of thin films of the topological insulator Bi2Se3. We find (1) two contributions of mobile charge carriers to the THz conductivity immediately after growth and (2) the spectral weight of the smaller of these decays significantly over a period of several days as the film is exposed to ambient conditions, while the other remains relatively constant. We associate the former with a bulk response and the latter with the surface. The surface response exhibits the expected robustness of the carriers from 2D topological surface states. We find no evidence for a third spectral feature derived from topologically trivial surface states. (C) 2013 AIP Publishing LLC
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