From organic single crystals to solution processed thin-films: Charge transport and trapping with varying degree of order

We have fabricated single crystal, thermally evaporated, and spin-coated thin-film transistors (TFTs) from the same organic semiconductor N,N'-1H,1H-perfluorobutyl dicyanoperylene carboxydiimide (PDIF-CN2) using various combinations of deposition methods and gate dielectrics to investigate how the charge transport properties vary with the degree of crystalline order. Never before has a semiconductor been studied in such a wide variety of processing methods, allowing cross-comparison of the microscopic factors influencing the charge transport, and in particular the trap density of states (DOS). Excellent transistor performance was achieved for PDIF-CN2 single crystals in combination with Cytop as a dielectric layer resulting in a mobility of up to 6 cm(2)/Vs, an on/off-ratio exceeding 10(8), and a subthreshold swing of 0.45 V/dec. Furthermore, gate-bias-stress effects are not present in these transistors and we observed low stress effects in the evaporated TFTs with Cytop as the gate dielectric. These findings are reflected in the trap DOS. The single crystal field-effect transistor with Cytop has a low trap DOS, whereas in evaporated TFTs, the trap DOS is higher by 2-3 orders of magnitude. Surprisingly, the trap DOS of the spin-coated TFT is similar to that in evaporated TFTs, except for additional discrete trap states centered around 0.24 eV below the conduction band. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4798610]