Related references
Note: Only part of the references are listed.X-ray diffraction and Raman spectroscopy study of strain in graphene films grown on 6H-SiC(0001) using propane-hydrogen-argon CVD
Adrien Michon et al.
SILICON CARBIDE AND RELATED MATERIALS 2012 (2013)
Growth mode and electric properties of graphene and graphitic phase grown by argon-propane assisted CVD on 3C-SiC/Si and 6H-SiC
M. Portail et al.
JOURNAL OF CRYSTAL GROWTH (2012)
CVD Growth of Graphene on 2 3C-SiC/Si Templates: Influence of Substrate Orientation and Wafer Homogeneity
M. Portail et al.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 (2012)
Structural and Electrical Properties of Graphene Films Grown by Propane/Hydrogen CVD on 6H-SiC(0001)
A. Michon et al.
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 (2012)
Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain
A. Michon et al.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2 (2012)
The quasi-free-standing nature of graphene on H-saturated SiC(0001)
F. Speck et al.
APPLIED PHYSICS LETTERS (2011)
Graphene Epitaxy by Chemical Vapor Deposition on SiC
W. Strupinski et al.
NANO LETTERS (2011)
Direct growth of few-layer graphene on 6H-SiC and 3C-SiC/Si via propane chemical vapor deposition
A. Michon et al.
APPLIED PHYSICS LETTERS (2010)
Graphene growth by molecular beam epitaxy on the carbon-face of SiC
E. Moreau et al.
APPLIED PHYSICS LETTERS (2010)
AFM study of ridges in few-layer epitaxial graphene grown on the carbon-face of 4H-SiC(000(1)over-bar)
Gyan Prakash et al.
CARBON (2010)
Epitaxial growth of graphitic carbon on C-face SiC and sapphire by chemical vapor deposition (CVD)
Jeonghyun Hwang et al.
JOURNAL OF CRYSTAL GROWTH (2010)
Graphene growth by molecular beam epitaxy using a solid carbon source
E. Moreau et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation
A. Al-Temimy et al.
APPLIED PHYSICS LETTERS (2009)
Etch rates near hot-wall CVD growth temperature for Si-face 4H-SiC using H-2 and C3H8
B. L. VanMil et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
Konstantin V. Emtsev et al.
NATURE MATERIALS (2009)
Graphene on the C-terminated SiC (0001) surface: An ab initio study
L. Magaud et al.
PHYSICAL REVIEW B (2009)
Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies
Laura B. Biedermann et al.
PHYSICAL REVIEW B (2009)
Quasi-Free-Standing Epitaxial Graphene on SiC Obtained by Hydrogen Intercalation
C. Riedl et al.
PHYSICAL REVIEW LETTERS (2009)
Rotational disorder in few-layer graphene films on 6H-SiC(000-1):: A scanning tunneling microscopy study
Francois Varchon et al.
PHYSICAL REVIEW B (2008)
Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study
K. V. Emtsev et al.
PHYSICAL REVIEW B (2008)
Why multilayer graphene on 4H-SiC(000(1)over-bar) behaves like a single sheet of graphene
J. Hass et al.
PHYSICAL REVIEW LETTERS (2008)
WSXM: A software for scanning probe microscopy and a tool for nanotechnology
I. Horcas et al.
REVIEW OF SCIENTIFIC INSTRUMENTS (2007)
Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
C Berger et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2004)
Solid-state graphitization mechanisms of silicon carbide 6H-SiC polar faces
I Forbeaux et al.
APPLIED SURFACE SCIENCE (2000)
Gaseous etching of 6H-SiC at relatively low temperatures
ZY Xie et al.
JOURNAL OF CRYSTAL GROWTH (2000)