Related references
Note: Only part of the references are listed.Electron traps in amorphous In-Ga-Zn-O thin films studied by isothermal capacitance transient spectroscopy
Kazushi Hayashi et al.
APPLIED PHYSICS LETTERS (2012)
Observation of a large gate-controlled persistent photoconduction in single crystal ZnO at room temperature
Shahnewaz Mondal et al.
APPLIED PHYSICS LETTERS (2011)
Correlation of photoconductivity response of amorphous In-Ga-Zn-O films with transistor performance using microwave photoconductivity decay method
Satoshi Yasuno et al.
APPLIED PHYSICS LETTERS (2011)
Characterization Method for the Relaxation Process of Metastable Defect States in Cu(In,Ga)Se2 Thin Films with Photoisothermal Capacitance Transient Spectroscopy
Hiroshi Okada et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2011)
Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy
Kenji Nomura et al.
JOURNAL OF APPLIED PHYSICS (2011)
Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD-PICTS) and microwave detected photoconductivity (MDP)
Bastian Berger et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2011)
Intrinsic carrier mobility in amorphous In-Ga-Zn-O thin-film transistors determined by combined field-effect technique
Mutsumi Kimura et al.
APPLIED PHYSICS LETTERS (2010)
Present status of amorphous In-Ga-Zn-O thin-film transistors
Toshio Kamiya et al.
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS (2010)
Steady-state photoconductivity of amorphous In-Ga-Zn-O
Dong Hee Lee et al.
THIN SOLID FILMS (2010)
Origins of threshold voltage shifts in room-temperature deposited and annealed a-In-Ga-Zn-O thin-film transistors
Kenji Nomura et al.
APPLIED PHYSICS LETTERS (2009)
Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4 Thin-Film Transistors
Kazushige Takechi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2009)
Instability of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors under Light Illumination
Dharam Pal Gosain et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2009)
Optical and Structural Properties of Ion-implanted InGaZnO Thin Films Studied with Spectroscopic Ellipsometry and Transmission Electron Microscopy
Jun Woo Park et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2009)
Application of DC Magnetron Sputtering to Deposition of InGaZnO Films for Thin Film Transistor Devices
Yeon-Keon Moon et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2009)
Subgap states in transparent amorphous oxide semiconductor, In-Ga-Zn-O, observed by bulk sensitive x-ray photoelectron spectroscopy
Kenji Nomura et al.
APPLIED PHYSICS LETTERS (2008)
Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing
Kenji Nomura et al.
APPLIED PHYSICS LETTERS (2008)
Trap densities in amorphous-InGaZnO4 thin-film transistors
Mutsumi Kimura et al.
APPLIED PHYSICS LETTERS (2008)
Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
A. Suresh et al.
APPLIED PHYSICS LETTERS (2008)
Photofield-Effect in Amorphous In-Ga-Zn-O (a-IGZO) Thin-Film Transistors
Tze-Ching Fung et al.
JOURNAL OF INFORMATION DISPLAY (2008)
Crystallinity evaluation by microwave photoconductivity decay in double-layered polycrystalline silicon thin films crystallized by solid green laser annealing
Yuta Sugawara et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2007)
High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channel
Jae Kyeong Jeong et al.
APPLIED PHYSICS LETTERS (2007)
Stability of transparent zinc tin oxide transistors under bias stress
P. Goerrn et al.
APPLIED PHYSICS LETTERS (2007)
Persistent photoconductivity in highly porous ZnO films
Jens Reemts et al.
JOURNAL OF APPLIED PHYSICS (2007)
High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
Hisato Yabuta et al.
APPLIED PHYSICS LETTERS (2006)
Photoconductivity of amorphous As-Se-Sb thin films
A. Dahshan et al.
THIN SOLID FILMS (2006)
Amorphous oxide semiconductors for high-performance flexible thin-film transistors
Kenji Nomura et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2006)
Trap-related photoconductivity in ZnO epilayers
TE Murphy et al.
JOURNAL OF ELECTRONIC MATERIALS (2006)
Light-intensity dependence of the steady-state photoconductivity used to estimate the density of states in the gap of intrinsic semiconductors
JA Schmidt et al.
THIN SOLID FILMS (2005)
High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
HQ Chiang et al.
APPLIED PHYSICS LETTERS (2005)
Lifetime mapping technique for ultrathin silicon-on-insulator wafers
S Sumie et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2005)
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
K Nomura et al.
NATURE (2004)
Validity of simplified Shockley-Read-Hall statistics for modeling carrier lifetimes in crystalline silicon
D Macdonald et al.
PHYSICAL REVIEW B (2003)
Phototransport spectroscopy of a-Si:H and μc-Si:H
I Balberg
JOURNAL OF NON-CRYSTALLINE SOLIDS (2002)
Charge injection and transport in films of CdSe nanocrystals
DS Ginger et al.
JOURNAL OF APPLIED PHYSICS (2000)
Share Paper
