Journal
JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 3, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4742128
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Funding
- National Natural Science Foundation of China [51002071]
- Program for Young Talents of Science and Technology in Universities of Inner Mongolia Autonomous Region
- Natural Science Foundation of Inner Mongolia [2010BS0802]
- Opening Project of Xinjiang Key Laboratory of Electronic Information Materials and Devices [XJYS0901-2011-01]
- Innovation Fund of Inner Mongolia University of Science and Technology [2009NC007]
- Fund of Industry-Academia-Research Project of Inner Mongolia University of Science and Technology [PY-201003]
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In this work, Pb0.97La0.02(Zr0.98Ti0.02)O-3 (PLZT 2/98/2) antiferroelectric (APE) thick films were successfully deposited on LaNiO3/Si(100) substrates by polyvinylpyrrolidone (PVP)-modified chemical solution. Each wet layer was first dried at 300 degrees C and then pyrolyzed at higher temperature B of 600, 650, or 700 degrees C, respectively. The effects of the pyrolyzed temperature B on the microstructure and the energy-storage performance of the AFE films were investigated in detail. As the increasing of the pyrolyzed temperature, the crystallized PLZT 2/98/2 films displayed a more uniform and dense surface microstructure. As a result, the dielectric properties, AFE characterization, and energy-storage performance were remarkably improved for the APE thick films pyrolyzed at higher temperature. The maximum energy-storage density of 58.1 J/cm(3) and the corresponding energy-storage efficiency of 37.3% were obtained in the PLZT 2/98/2 films pyrolyzed at 700 degrees C for every layer. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742128]
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