Journal
JOURNAL OF APPLIED PHYSICS
Volume 111, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3699315
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Funding
- EC
- NRW-EU
- ESF [2009/0202/1DP/1.1.1.2.0/09/APIA/VIAA/141]
- ERAF [2010/0272/2DP/2.1.1.1.0/10/APIA/VIAA/088]
- ID03 [MA-1082]
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Resistive switching metal-insulator-metal structures were fabricated from epitaxial Fe-doped SrTiO3 thin films to study the distribution of oxygen vacancies in a switched memristor cell using a micro-focused x-ray beam. In addition to the main filament, we found that the concentration of oxygen vacancies increases homogeneously over the whole electrode area during the electroforming procedure. The x-ray absorption near-edge structure (XANES) observed at the location of the filament exhibits distinct differences to the surrounding area, which are interpreted with full-multiple-scattering XANES calculations to derive from oxygen vacancy clustering in the first coordination shell around Fe. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3699315]
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