Study of barrier inhomogeneities in I-V-T and C-V-T characteristics of Al/Al2O3/PVA:n-ZnSe metal-oxide-semiconductor diode

This paper presents detailed analysis of forward and reverse bias I-V and C-V characteristics of Al/Al2O3/PVA:n-ZnSe metal-oxide-semiconductor diode. PVA:n-ZnSe nanocomposites are prepared by chemical bath deposition technique. The alumina layer is deposited on Al substrate by electrolytic anodization method. The temperature dependence I-V parameters such as series resistance (R-S), the ideality factor (n), the barrier height (phi(b)), the Richardson constant (A*), mean barrier height, and the leakage current (I-leakage) have been explained on the basis of inhomogeneity. The series resistance obtained from Chenug's method and Norde's method shows close agreement with each other. In C-V measurements, in the reverse bias of Al/Al2O3/PVA:n-ZnSe metal-oxide-semiconductor diode has been performed as a function of temperature. The temperature dependence C-V parameters barrier height phi((C-V)), the built-in-voltage (V-bi), carrier concentration (N-D), Fermi energy (E-F), and depletion layer width (W) have been calculated at different temperatures. The discrepancy in barrier height obtained from I-V and C-V measurements and barrier inhomogeneities of Al/Al2O3/PVA:n-ZnSe contact has been explained by assuming Gaussian distribution of barrier heights using potential fluctuation model. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737589]