Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode

1/f noise measurements were performed on Ni/n-GaN Schottky barrier diode under forward bias over a wide temperature range from 80 to 300 K. The noise spectra exhibited frequency dependence proportional to 1/f 0 with c varying between 0.8 and 1.1 down to 1 Hz. The spectral power density of current fluctuations, SI, was found to decrease with increase in temperature. Current-voltage ( I-V) characteristics of the diodes have been measured, and metal-semiconductor interface was found to be spatially inhomogeneous in the temperature range 80-300K. The decrease in 1/f noise with increase in temperature is explained within the framework of spatial inhomogeneities model. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4737258]