Journal
JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4759354
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Funding
- ST Microelectronics RD in Catania
- LAST POWER project (ENIAC) [120218]
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The influence of the surface morphology on the channel mobility of 4H-SiC metal-oxide-semiconductor field effect transistors annealed under two different conditions is discussed. The devices were fabricated using post-implantation annealing at 1650 degrees C. In particular, while the use of a protective capping layer during post-implantation annealing preserved a smooth 4H-SiC surface resulting in a channel mobility of 24 cm(2) V-1 s(-1), a rougher morphology of the channel region (with the presence of surface macrosteps) was observed in the devices annealed without protection, which in turn exhibited a higher mobility (40 cm(2) V-1 s(-1)). An electrical analysis of SiO2/SiC capacitors demonstrated a reduction of the interface state density from 7.2 x 10(11) to 3.6 x 10(11) cm(-2) eV(-1), which is consistent with the observed increase of the mobility. However, high resolution transmission electron microscopy showed an almost atomically perfect SiO2/4HS-iC interface. The electrical results were discussed considering the peculiar surface morphology of the annealed 4H-SiC surfaces, i.e., attributing the overall reduction of the interface state density to the appearance of macrosteps exposing non-basal planes. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759354]
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