Journal
JOURNAL OF APPLIED PHYSICS
Volume 111, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3687923
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- National Sciences and Engineering Research Council of Canada (NSERC)
- Crosslight Software Inc.
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An interdiffusivity model was established for SiGe interdiffusion under tensile or relaxed strain over the full Ge content (x(Ge)) range (0 <= x(Ge) <= 1), which is based on the correlations between self-diffusivity, intrinsic diffusivity, and interdiffusivity. It unifies available interdiffusivity models over the full Ge range and applies to a wider temperature range up to 1270 degrees C at the x(Ge) = 0 end and to 900 degrees C at the high x(Ge) = 1 end. Interdiffusion experiments under soak and spike rapid thermal annealing conditions were conducted to verify the model. Literature interdiffusion data under furnace annealing conditions were also used for the same purpose. The interdiffusivity model of this work has been implemented in major process simulation tools, and the simulation results showed good agreement with experimental data under furnace annealing and soak and spike rapid thermal annealing conditions. This work demonstrated a new approach in studying SiGe interdiffusion, which has the advantage of studying interdiffusion under non-isothermal annealing conditions. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3687923]
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