Journal
JOURNAL OF APPLIED PHYSICS
Volume 111, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3702446
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- National Science Council of Taiwan [100-2112-M-018-003-MY3]
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A photocurrent decay model is presented that addresses the charge trapping and doping mechanisms for composite poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) films having ZnO nanoparticles of different contents. It is shown that ZnO doping introduced changes in the chemical structure of PEDOT: PSS. Dark current proportional to ZnO doping was observed. For n-type Si/ZnO-doped PEDOT: PSS devices, the high photocurrent density originates from efficient hole transport combined with long-lifetime electron trapping. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3702446]
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