Related references
Note: Only part of the references are listed.Suppression of in-plane tunneling anisotropic magnetoresistance effect in Co2MnSi/MgO/n-GaAs and CoFe/MgO/n-GaAs junctions by inserting a MgO barrier
Takafumi Akiho et al.
APPLIED PHYSICS LETTERS (2011)
Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation
Nicolas Reckinger et al.
APPLIED PHYSICS LETTERS (2011)
Increase in current density for metal contacts to n-germanium by inserting TiO2 interfacial layer to reduce Schottky barrier height
J-Y. Jason Lin et al.
APPLIED PHYSICS LETTERS (2011)
Bandstructure line-up of epitaxial Fe/MgO/Ge heterostructures: A combined x-ray photoelectron spectroscopy and transport study
M. Cantoni et al.
APPLIED PHYSICS LETTERS (2011)
Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance
Ze Yuan et al.
APPLIED PHYSICS LETTERS (2011)
Reducing Schottky barrier height for Fe/n-GaAs junction by inserting thin GaOx layer
H. Saito et al.
JOURNAL OF APPLIED PHYSICS (2011)
Branch-point energies and the band-structure lineup at Schottky contacts and heterostrucures
Winfried Moench
JOURNAL OF APPLIED PHYSICS (2011)
Mechanisms of Schottky Barrier Control on n-Type Germanium Using Ge3N4 Interlayers
R. R. Lieten et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2011)
Chemical and electronic properties of Fe/MgO/Ge heterostructures for spin electronics
D. Petti et al.
INTERNATIONAL CONFERENCE ON TRENDS IN SPINTRONICS AND NANOMAGNETISM (TSN 2010) (2011)
Schottky and tunneling behavior of Fe/MgO/Ge(100) structures
J-B Laloe et al.
APPLIED PHYSICS LETTERS (2010)
Single crystalline CoFe/MgO tunnel contact on nondegenerate Ge with a proper resistance-area product for efficient spin injection and detection
Kun-Rok Jeon et al.
APPLIED PHYSICS LETTERS (2010)
Investigating the origin of Fermi level pinning in Ge Schottky junctions using epitaxially grown ultrathin MgO films
Yi Zhou et al.
APPLIED PHYSICS LETTERS (2010)
The influence of Fermi level pinning/depinning on the Schottky barrier height and contact resistance in Ge/CoFeB and Ge/MgO/CoFeB structures
Donkoun Lee et al.
APPLIED PHYSICS LETTERS (2010)
Metal/III-V Schottky barrier height tuning for the design of nonalloyed III-V field-effect transistor source/drain contacts
Jenny Hu et al.
JOURNAL OF APPLIED PHYSICS (2010)
Contact engineering for organic semiconductor devices via Fermi level depinning at the metal-organic interface
Zihong Liu et al.
PHYSICAL REVIEW B (2010)
Near band edge Schottky barrier height modulation using high-κ dielectric dipole tuning mechanism
B. E. Coss et al.
APPLIED PHYSICS LETTERS (2009)
Fermi level depinning in metal/Ge Schottky junction for metal source/drain Ge metal-oxide-semiconductor field-effect-transistor application
Masaharu Kobayashi et al.
JOURNAL OF APPLIED PHYSICS (2009)
A significant shift of Schottky barrier heights at strongly pinned metal/germanium interface by inserting an ultra-thin insulating film
Tomonori Nishimura et al.
APPLIED PHYSICS EXPRESS (2008)
Alleviation of Fermi-level pinning effect on metal/germanium interface by insertion of an ultrathin aluminum oxide
Yi Zhou et al.
APPLIED PHYSICS LETTERS (2008)
Ohmic contact formation on n-type Ge
R. R. Lieten et al.
APPLIED PHYSICS LETTERS (2008)
Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface
Tomonori Nishimura et al.
APPLIED PHYSICS LETTERS (2007)
On the electric-dipole contribution to the valence-band offsets in semiconductor-oxide heterostructures
Winfried Moencha
APPLIED PHYSICS LETTERS (2007)
Varying the Schottky barrier of thin film Mg/H: p-Si(111) contacts:: Properties and applications
H. Nienhaus et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2007)
Fermi-level pinning and charge neutrality level in germanium
A. Dimoulas et al.
APPLIED PHYSICS LETTERS (2006)
Ab initio studies on Schottky barrier heights at metal gate/LaAlO3(001) interfaces
Y. F. Dong et al.
APPLIED PHYSICS LETTERS (2006)
Cobalt-Al2O3-silicon tunnel contacts for electrical spin injection into silicon
B. C. Min et al.
JOURNAL OF APPLIED PHYSICS (2006)
Slope parameters of the barrier heights of metal-organic contacts
W Mönch
APPLIED PHYSICS LETTERS (2006)
Current transport mechanism in Al/Si3N4/p-Si (MIS) Schottky barrier diodes at low temperatures
S Zeyrek et al.
APPLIED SURFACE SCIENCE (2006)
Fermi-level depinning for low-barrier Schottky source/drain transistors
D Connelly et al.
APPLIED PHYSICS LETTERS (2006)
Chemical tuning of band alignments for metal gate/high-kappa oxide interfaces
YF Dong et al.
PHYSICAL REVIEW B (2006)
Complex band structure and the band alignment problem at the Si-high-k dielectric interface -: art. no. 195306
AA Demkov et al.
PHYSICAL REVIEW B (2005)
Energy level alignment at organic heterojunctions: Role of the charge neutrality level
H Vazquez et al.
PHYSICAL REVIEW B (2005)
Relationship between barrier heights and ideality factors of H-terminated Pb/p-Si contacts with and without the interfacial oxide layer
ME Aydin et al.
APPLIED SURFACE SCIENCE (2004)
Dipole formation at metal/PTCDA interfaces:: role of the charge neutrality level
H Vázquez et al.
EUROPHYSICS LETTERS (2004)
New route to zero-barrier metal source/drain MOSFETs
D Connelly et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2004)
The barrier-height inhomogeneity in identically prepared H-terminated Ti/p-Si Schottky barrier diodes
H Cetin et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2004)
Barrier formation at metal-organic interfaces:: dipole formation and the charge neutrality level
H Vázquez et al.
APPLIED SURFACE SCIENCE (2004)
Electronic structure at realistic Si(100)-SiO2 interfaces
F Giustino et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS (2004)
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology
YC Yeo et al.
JOURNAL OF APPLIED PHYSICS (2002)