Strain analysis of a wrinkled SiGe bilayer thin film

We report a strain analysis on a wrinkled semiconductor pattern formed by a p-doped bilayer thin film that is compressively strained. The strain distribution is studied with a theoretical analysis using a non-linear plate theory in conjunction with a detailed morphology measurement. The results show that the normal strain reduces continuously as the wrinkle amplitude increases, due to the stretching effect, and that the variation in the strain along the wrinkle edge is dominated by the bending effect, which agrees reasonably with the Raman measurement. (C) 2012 American Institute of Physics. [doi:10.1063/1.3682769]