Related references
Note: Only part of the references are listed.Band structure of Si/Ge core-shell nanowires along the [110] direction modulated by external uniaxial strain
Xihong Peng et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2011)
Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate
M. H. Hadj Alouane et al.
NANOTECHNOLOGY (2011)
On the p-type character of Cd-and Zn-doped InAs nanowires
Claudia L. dos Santos et al.
NANOTECHNOLOGY (2011)
Mechanisms of molecular beam epitaxy growth in InAs/InP nanowire heterostructures
C. M. Haapamaki et al.
NANOTECHNOLOGY (2011)
Low hole effective mass in thin InAs nanowires
Claudia L. dos Santos et al.
APPLIED PHYSICS LETTERS (2010)
Spatial confinement of carriers and tunable band structures in InAs/InP-core-shell nanowires
Haibo Shu et al.
CHEMICAL PHYSICS LETTERS (2010)
Strain-Induced Band Gap Modification in Coherent Core/Shell Nanostructures
Shenyuan Yang et al.
NANO LETTERS (2010)
Diameter dependence of mechanical, electronic, and structural properties of InAs and InP nanowires: A first-principles study
Claudia L. dos Santos et al.
PHYSICAL REVIEW B (2010)
Surface passivated InAs/InP core/shell nanowires
J. W. W. van Tilburg et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2010)
GaAs Core-Shell Nanowires for Photovoltaic Applications
Josef A. Czaban et al.
NANO LETTERS (2009)
First-principles calculations on the origins of the gap bowing in InAs1-xPx alloys
A. Breidi et al.
PHYSICA B-CONDENSED MATTER (2009)
Ambipolar transistor behavior in p-doped InAs nanowires grown by molecular beam epitaxy
B. S. Sorensen et al.
APPLIED PHYSICS LETTERS (2008)
Type-II behavior in wurtzite InP/InAs/InP core-multishell nanowires
B. Pal et al.
APPLIED PHYSICS LETTERS (2008)
Transients in the Formation of Nanowire Heterostructures
Linus E. Froeberg et al.
NANO LETTERS (2008)
Role of molecular surface passivation in electrical transport properties of InAs nanowires
Qingling Hang et al.
NANO LETTERS (2008)
Quantum confinement effect in Si/Ge core-shell nanowires: First-principles calculations
Li Yang et al.
PHYSICAL REVIEW B (2008)
InAs/InP radial nanowire heterostructures as high electron mobility devices
Xiaocheng Jiang et al.
NANO LETTERS (2007)
Remote p-doping of InAs nanowires
H.-Y. Li et al.
NANO LETTERS (2007)
Ambipolar conduction in transistors using solution grown InAs nanowires with Cd doping
Qingling Hang et al.
APPLIED PHYSICS LETTERS (2007)
Fabrication, optical characterization and modeling of strained core-shell nanowires
Z. Zanolli et al.
THIN SOLID FILMS (2006)
Core/multishell nanowire heterostructures as multicolor, high-efficiency light-emitting diodes
F Qian et al.
NANO LETTERS (2005)
Nanowire single-electron memory
C Thelander et al.
NANO LETTERS (2005)
Structural and electronic properties of epitaxial core-shell nanowire heterostructures
RN Musin et al.
PHYSICAL REVIEW B (2005)
Prediction of barrier localization in modulated nanowires
LCLY Voon et al.
JOURNAL OF APPLIED PHYSICS (2004)
Single-electron transistors in heterostructure nanowires
C Thelander et al.
APPLIED PHYSICS LETTERS (2003)
Electron states in modulated nanowires
LCLY Voon et al.
JOURNAL OF APPLIED PHYSICS (2003)
Nanowire resonant tunneling diodes
MT Björk et al.
APPLIED PHYSICS LETTERS (2002)
Epitaxial core-shell and core-multishell nanowire heterostructures
LJ Lauhon et al.
NATURE (2002)
Growth of nanowire superlattice structures for nanoscale photonics and electronics
MS Gudiksen et al.
NATURE (2002)
Band parameters for III-V compound semiconductors and their alloys
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2001)
Share Paper
