Journal
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3587174
Keywords
-
Categories
Ask authors/readers for more resources
The atomic structure and composition of noninterfacial ITO and ITO-Si interfaces were studied with transmission electron microscopy and x-ray photoelectron spectroscopy (XPS). The films were deposited by dc magnetron sputtering on monocrystalline p-type (100) Si wafers. Both as deposited and heat treated films consisted of crystalline ITO. The ITO/Si interface showed a more complicated composition. A thin layer of SiOx was found at the ITO/Si interface together with In and Sn nanoclusters, as well as highly oxygen deficient regions, as observed by XPS. High energy electron exposure of this area crystallized the In nanoclusters and at the same time increased the SiOx interface layer thickness. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3587174]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available