Related references
Note: Only part of the references are listed.Determination of Composition and Lattice Relaxation in Semipolar Ternary (In,Al,Ga)N Strained Layers from Symmetric X-ray Diffraction Measurements
Erin C. Young et al.
APPLIED PHYSICS EXPRESS (2011)
Misfit dislocation formation at heterointerfaces in (Al, In)GaN heteroepitaxial layers grown on semipolar free-standing GaN substrates
F. Wu et al.
JOURNAL OF APPLIED PHYSICS (2011)
AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm
Anurag Tyagi et al.
APPLIED PHYSICS EXPRESS (2010)
Lattice Tilt and Misfit Dislocations in (11(2)over-bar2) Semipolar GaN Heteroepitaxy
Erin C. Young et al.
APPLIED PHYSICS EXPRESS (2010)
Critical Thickness for Onset of Plastic Relaxation in (11(2)over-bar2) and (20(2)over-bar1) Semipolar AlGaN Heterostructures
Erin C. Young et al.
APPLIED PHYSICS EXPRESS (2010)
Anisotropy of tensile stresses and cracking in nonbasal plane AlxGa1-xN/GaN heterostructures
Erin C. Young et al.
APPLIED PHYSICS LETTERS (2010)
Strains and rotations in thin deposited films
J. P. Hirth et al.
PHILOSOPHICAL MAGAZINE (2010)
Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on m-Plane GaN
Alec M. Fischer et al.
APPLIED PHYSICS EXPRESS (2009)
500-nm Optical Gain Anisotropy of Semipolar (11(2)over-bar2) InGaN Quantum Wells
Dmitry S. Sizov et al.
APPLIED PHYSICS EXPRESS (2009)
531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates
Yohei Enya et al.
APPLIED PHYSICS EXPRESS (2009)
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (11(2)over-bar2) GaN free standing substrates
Anurag Tyagi et al.
APPLIED PHYSICS LETTERS (2009)
Nonpolar and Semipolar Group III Nitride-Based Materials
J. S. Speck et al.
MRS BULLETIN (2009)
Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (11(2)over-bar2) gallium nitride substrates
Hirokuni Asamizu et al.
APPLIED PHYSICS EXPRESS (2008)
Characteristics of long wavelength InGaN quantum well laser diodes
K. S. Kim et al.
APPLIED PHYSICS LETTERS (2008)
Equilibrium critical thickness for misfit dislocations in III-nitrides
David Holec et al.
JOURNAL OF APPLIED PHYSICS (2008)
Realization of low-dislocation-density, smooth surface, and thick GaInN films on m-plane GaN templates
Aya Miura et al.
JOURNAL OF CRYSTAL GROWTH (2008)
High-quality nonpolar m-plane GaN substrates grown by HVPE
Kenji Fujito et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2008)
Generation of misfit dislocations in highly mismatched GaN/AlN layers
J. Bai et al.
SURFACE SCIENCE (2008)
Pure blue laser diodes based on nonpolar m-plane gallium nitride with InGaN waveguiding layers
Kuniyoshi Okamoto et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2007)
Critical thickness calculations for InGaN/GaN
D. Holec et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Continuous-wave operation of m-plane InGaN multiple quantum well laser diodes
Kuniyoshi Okamoto et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2007)
Strain relief and dislocation motion in III-nitride films grown on stepped and step-free 4H-SiC mesas
M. E. Twigg et al.
JOURNAL OF APPLIED PHYSICS (2007)
Demonstration of nonpolar m-plane InGaN/GaN laser diodes
Mathew C. Schmidt et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2007)
Generation of misfit dislocations by basal-plane slip in InGaN/GaN heterostructures
R. Liu et al.
APPLIED PHYSICS LETTERS (2006)
Strain-induced polarization in wurtzite III-nitride semipolar layers
A. E. Romanov et al.
JOURNAL OF APPLIED PHYSICS (2006)
Misfit dislocation generation in InGaN epilayers on free-standing GaN
Rong Liu et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2006)
Characterization of planar semipolar gallium nitride films on sapphire substrates
TJ Baker et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2006)
V-defects and dislocations in InGaN/GaN heterostructures
AM Sánchez et al.
THIN SOLID FILMS (2005)
Misfit accommodation of compact and columnar InN epilayers grown on Ga-face GaN (0001) by molecular-beam epitaxy
T Kehagias et al.
APPLIED PHYSICS LETTERS (2005)
Buried stressors in nitride semiconductors: Influence on electronic properties
AE Romanov et al.
JOURNAL OF APPLIED PHYSICS (2005)
Characterization of planar semipolar gallium nitride films on spinel substrates
TJ Baker et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2005)
Plastic strain relaxation of nitride heterostructures
E Bellet-Amalric et al.
JOURNAL OF APPLIED PHYSICS (2004)
In situ measurements of the critical thickness for strain relaxation in AlGaN/GaN heterostructures
SR Lee et al.
APPLIED PHYSICS LETTERS (2004)
Structural and morphological evolution of GaN grown by metalorganic chemical vapor deposition on SiC substrates using an AlN initial layer
B Moran et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Misfit dislocation formation in the AlGaN/GaN heterointerface
JA Floro et al.
JOURNAL OF APPLIED PHYSICS (2004)
Slip systems and misfit dislocations in InGaN epilayers
S Srinivasan et al.
APPLIED PHYSICS LETTERS (2003)
Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
JM Bethoux et al.
JOURNAL OF APPLIED PHYSICS (2003)
Structural characterization of nonpolar (11(2)over-bar0) a-plane GaN thin films grown on (1(1)over-bar02) r-plane sapphire
MD Craven et al.
APPLIED PHYSICS LETTERS (2002)
Substrates for gallium nitride epitaxy
L Liu et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2002)
Yield strength and dislocation mobility in plastically deformed bulk single-crystal GaN
I Yonenaga et al.
JOURNAL OF APPLIED PHYSICS (2001)
Critical thickness of high-temperature AlN interlayers in GaN on sapphire (0001)
AM Sanchez et al.
JOURNAL OF ELECTRONIC MATERIALS (2001)
Brittle-ductile relaxation kinetics of strained AlGaN/GaN heterostructures
SJ Hearne et al.
APPLIED PHYSICS LETTERS (2000)
Growth of M-plane GaN(1(1)over-bar-00) on gamma-LiAlO2(100)
P Waltereit et al.
JOURNAL OF CRYSTAL GROWTH (2000)