Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3653265
Keywords
-
Categories
Funding
- Department of Science and Technology (DST), India
- CSIR
Ask authors/readers for more resources
We report an inelastic (Raman) light scattering study on bulk crystalline GeTe (c-GeTe) and amorphous GeTe (a-GeTe) thin films and found to show pronounced similarities in local structure between the two states. In c-GeTe, the observed Raman modes represent the Ge atoms are in three different environments, namely, tetrahedral, distorted, and defective octahedral sites. On the other hand, in a-GeTe, Raman spectrum reveals Ge sites in tetrahedral and defective octahedral environment. We suggest that the structure of c-GeTe consists of highly distorted as well as defective Ge sites, which leads to the large concentration of intrinsic defects (vacancies). These random defects would act as topological disorder in the lattice and cause the bands to develop tails at the band edges, a continuum of localized levels appearing in the gap. The present study deepens the understanding of the local atomic structure, influence of defects and its close relation to the phase-change mechanism. (C) 2011 American Institute of Physics. [doi:10.1063/1.3653265]
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available