Journal
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3533767
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Funding
- NSF [DMR-0907385]
- ARL [W911NF-07-2-0046]
- McMinn Endowment at Vanderbilt University
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [907385] Funding Source: National Science Foundation
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Oxidation of SiC with the incorporation of Na in the gate oxide was recently found to lead to significantly enhanced electron mobilities in the SiC inversion layer but the underlying mechanism has remained elusive. Here, we report a combination of density functional first-principles calculations and experiments. The new findings demonstrate that neutral Na is essentially a spectator impurity that occupies near interfacial interstitial sites and does not interact with the interface or with interfacial defects. Na ions, however, introduce an effective mass hydrogenic impurity band at the edge of the SiC conduction band that can account for the observed effects. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3533767]
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