Related references
Note: Only part of the references are listed.A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors
An Quan Jiang et al.
ADVANCED MATERIALS (2011)
Mixed analog-digital crossbar-based hardware implementation of sign-sign LMS adaptive filter
Farnood Merrikh-Bayat et al.
ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING (2011)
Oxide Electronics Utilizing Ultrafast Metal-Insulator Transitions
Zheng Yang et al.
ANNUAL REVIEW OF MATERIALS RESEARCH, VOL 41 (2011)
Artificial cognitive memory-changing from density driven to functionality driven
L. P. Shi et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2011)
Synaptic behaviors of a single metal-oxide-metal resistive device
Sang-Jun Choi et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2011)
Resistance switching memories are memristors
Leon Chua
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2011)
Chaotic memristor
T. Driscoll et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2011)
Metal-insulator transition and electrically driven memristive characteristics of SmNiO3 thin films
Sieu D. Ha et al.
APPLIED PHYSICS LETTERS (2011)
From Synapses to Circuitry: Using Memristive Memory to Explore the Electronic Brain
Greg Snider et al.
COMPUTER (2011)
Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in TiO2 for Resistive Switching Memory
Seong-Geon Park et al.
IEEE ELECTRON DEVICE LETTERS (2011)
Memristor Applications for Programmable Analog ICs
Sangho Shin et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2011)
Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search Engines
Kamran Eshraghian et al.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS (2011)
Variable gain amplifier circuit using titanium dioxide memristors
T. A. Wey et al.
IET CIRCUITS DEVICES & SYSTEMS (2011)
Electrically-driven metal-insulator transition with tunable threshold voltage in a VO2-SmNiO3 heterostructure on silicon
Sieu D. Ha et al.
JOURNAL OF APPLIED PHYSICS (2011)
Tunable work function of a WOx buffer layer for enhanced photocarrier collection of pin-type amorphous silicon solar cells
Liang Fang et al.
JOURNAL OF APPLIED PHYSICS (2011)
Thermographic analysis of localized conductive channels in bipolar resistive switching devices
Yi Meng Lu et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2011)
Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device
Kyungah Seo et al.
NANOTECHNOLOGY (2011)
Giant tunnel electroresistance with PbTiO3 ferroelectric tunnel barriers
A. Crassous et al.
APPLIED PHYSICS LETTERS (2010)
Memristive adaptive filters
T. Driscoll et al.
APPLIED PHYSICS LETTERS (2010)
Passive switching of electromagnetic devices with memristors
Matthew G. Bray et al.
APPLIED PHYSICS LETTERS (2010)
Overview of the IBM Blue Gene/P project
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2010)
Unipolar TaOx-Based Resistive Change Memory Realized With Electrode Engineering
Lijie Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Unipolar Switching Behaviors of RTO WOX RRAM
W. C. Chien et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Configurable Neural Phase Shifter With Spike-Timing-Dependent Plasticity
Lei Zhang et al.
IEEE ELECTRON DEVICE LETTERS (2010)
A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM
Shimeng Yu et al.
IEEE ELECTRON DEVICE LETTERS (2010)
Analog VLSI Biophysical Neurons and Synapses With Programmable Membrane Channel Kinetics
Theodore Yu et al.
IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS (2010)
Practical Approach to Programmable Analog Circuits With Memristors
Yuriy V. Pershin et al.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS (2010)
A 1.62/2.7-Gb/s Adaptive Transmitter With Two-Tap Preemphasis Using a Propagation-Time Detector
Shih-Yuan Kao et al.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS (2010)
Radiation Hardness of TiO2 Memristive Junctions
William M. Tong et al.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE (2010)
IMPLEMENTING MEMRISTOR BASED CHAOTIC CIRCUITS
Bharathwaj Muthuswamy
INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS (2010)
Unipolar resistive switching behaviors in amorphous lutetium oxide films
Xu Gao et al.
JOURNAL OF APPLIED PHYSICS (2010)
The fabrication of a programmable via using phase-change material in CMOS-compatible technology
Kuan-Neng Chen et al.
NANOTECHNOLOGY (2010)
A memristor-based nonvolatile latch circuit
Warren Robinett et al.
NANOTECHNOLOGY (2010)
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok-Hwang Kwon et al.
NATURE NANOTECHNOLOGY (2010)
Experimental demonstration of associative memory with memristive neural networks
Yuriy V. Pershin et al.
NEURAL NETWORKS (2010)
Artificial neural networks in hardware A survey of two decades of progress
Janardari Misra et al.
NEUROCOMPUTING (2010)
Resistive Random Access Memory (ReRAM) Based on Metal Oxides
Hiroyuki Akinaga et al.
PROCEEDINGS OF THE IEEE (2010)
An Emergent Change of Phase for Electronics
Hidenori Takagi et al.
SCIENCE (2010)
Understanding the Nature of Ultrafast Polarization Dynamics of Ferroelectric Memory in the Multiferroic BiFeO3
Dhanvir Singh Rana et al.
ADVANCED MATERIALS (2009)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Switchable rectifier built with Pt/TiOx/Pt trilayer
Hisashi Shima et al.
APPLIED PHYSICS LETTERS (2009)
Role of TaON interface for CuxO resistive switching memory based on a combined model
P. Zhou et al.
APPLIED PHYSICS LETTERS (2009)
Memristive switching of MgO based magnetic tunnel junctions
Patryk Krzysteczko et al.
APPLIED PHYSICS LETTERS (2009)
Categorization of resistive switching of metal-Pr0.7Ca0.3MnO3-metal devices
Z. L. Liao et al.
APPLIED PHYSICS LETTERS (2009)
Multilevel unipolar resistance switching in TiO2 thin films
S. C. Chae et al.
APPLIED PHYSICS LETTERS (2009)
Phase-transition driven memristive system
T. Driscoll et al.
APPLIED PHYSICS LETTERS (2009)
Giant tunneling magnetoresistance up to 330% at room temperature in sputter deposited Co2FeAl/MgO/CoFe magnetic tunnel junctions
Wenhong Wang et al.
APPLIED PHYSICS LETTERS (2009)
Memristor-based stored-reference receiver-the UWB solution?
K. Witrisal
ELECTRONICS LETTERS (2009)
Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
Bin Gao et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Elimination of Forming Process for TiOx Nonvolatile Memory Devices
Wei Wang et al.
IEEE ELECTRON DEVICE LETTERS (2009)
RESET Mechanism of TiOx Resistance-Change Memory Device
Wei Wang et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Phase-Change-Driven Programmable Switch for Nonvolatile Logic Applications
Sung-Min Yoon et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Spintronic Memristor Through Spin-Torque-Induced Magnetization Motion
Xiaobin Wang et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Resistive-Switching Characteristics of Al/Pr0.7Ca0.3MnO3 for Nonvolatile Memory Applications
Dong-Jun Seong et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices
Ugo Russo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
Ugo Russo et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Design of Reconfigurable and Robust Integrated SC Power Converter for Self-Powered Energy-Efficient Devices
Inshad Chowdhury et al.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS (2009)
A Signal-Processing Adaptive Algorithm for Selective Current Harmonic Cancellation in Active Power Filters
Francisco D. Freijedo et al.
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS (2009)
Highly uniform resistive switching characteristics of TiN/ZrO2/Pt memory devices
B. Sun et al.
JOURNAL OF APPLIED PHYSICS (2009)
Forming-free colossal resistive switching effect in rare-earth-oxide Gd2O3 films for memristor applications
Xun Cao et al.
JOURNAL OF APPLIED PHYSICS (2009)
Memristor-CMOS Hybrid Integrated Circuits for Reconfigurable Logic
Qiangfei Xia et al.
NANO LETTERS (2009)
An electrically modifiable synapse array of resistive switching memory
Hyejung Choi et al.
NANOTECHNOLOGY (2009)
Giant tunnel electroresistance for non-destructive readout of ferroelectric states
V. Garcia et al.
NATURE (2009)
Classification of Correlated Patterns with a Configurable Analog VLSI Neural Network of Spiking Neurons and Self-Regulating Plastic Synapses
Massimilian Giulioni et al.
NEURAL COMPUTATION (2009)
Relationship between resistive switching characteristics and band diagrams of Ti/Pr1-xCaxMnO3 junctions
S. Asanuma et al.
PHYSICAL REVIEW B (2009)
Memristive model of amoeba learning
Yuriy V. Pershin et al.
PHYSICAL REVIEW E (2009)
A hybrid nanomemristor/transistor logic circuit capable of self-programming
Julien Borghetti et al.
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA (2009)
Switchable Ferroelectric Diode and Photovoltaic Effect in BiFeO3
T. Choi et al.
SCIENCE (2009)
Polarization Control of Electron Tunneling into Ferroelectric Surfaces
Peter Maksymovych et al.
SCIENCE (2009)
First-principles study on the electronic and optical properties of BiFeO3
Hai Wang et al.
SOLID STATE COMMUNICATIONS (2009)
Resistance switching in anodic oxidized amorphous TiO2 films
Changhao Liang et al.
APPLIED PHYSICS EXPRESS (2008)
Control of resistance switching voltages in rectifying Pt/TiOx/Pt trilayer
Hisashi Shima et al.
APPLIED PHYSICS LETTERS (2008)
Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
Wen-Yuan Chang et al.
APPLIED PHYSICS LETTERS (2008)
Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode
Hisashi Shima et al.
APPLIED PHYSICS LETTERS (2008)
Demonstration of multilevel cell spin transfer switching in MgO magnetic tunnel junctions
Xiaohua Lou et al.
APPLIED PHYSICS LETTERS (2008)
Overview of candidate device technologies for storage-class memory
G. W. Burr et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2008)
How We Found The Missing Memristor
R. Williams
IEEE SPECTRUM (2008)
MEMRISTOR OSCILLATORS
Makoto Itoh et al.
INTERNATIONAL JOURNAL OF BIFURCATION AND CHAOS (2008)
Reproducible resistance switching characteristics of hafnium oxide-based nonvolatile memory devices
Yong-Mu Kim et al.
JOURNAL OF APPLIED PHYSICS (2008)
Process and material properties of HfLaOx prepared by atomic layer deposition
Wei He et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2008)
Whither Oxide Electronics?
Ramamoorthy Ramesh et al.
MRS BULLETIN (2008)
The missing memristor found
Dmitri B. Strukov et al.
NATURE (2008)
Resistive switching in transition metal oxides
Akihito Sawa
MATERIALS TODAY (2008)
Memristive switching mechanism for metal/oxide/metal nanodevices
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2008)
Epitaxial growth of high-κ oxides on silicon
C. Merckling et al.
THIN SOLID FILMS (2008)
Challenges for large-scale implementations of spiking neural networks on FPGAs
L. P. Maguire et al.
NEUROCOMPUTING (2007)
Temperature dependence of optical band gap in ferroelectric Bi3.25La0.75Ti3O12 films determined by ultraviolet transmittance measurements
Z. G. Hu et al.
APPLIED PHYSICS LETTERS (2007)
High speed resistive switching in Pt/TiO2/TiN film for nonvolatile memory application
Chikako Yoshida et al.
APPLIED PHYSICS LETTERS (2007)
The emergence of spin electronics in data storage
Claude Chappert et al.
NATURE MATERIALS (2007)
Switching characteristics of Cu2O metal-insulator-metal resistive memory
A. Chen et al.
APPLIED PHYSICS LETTERS (2007)
Self-organized computation with unreliable, memristive nanodevices
G. S. Snider
NANOTECHNOLOGY (2007)
Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides:: Sc2O3, Lu2O3, LaLuO3
V. V. Afanas'ev et al.
MICROELECTRONIC ENGINEERING (2007)
Effect of electrode composition on the tunnel magnetoresistance of pseudo-spin-valve magnetic tunnel junction with a MgO tunnel barrier
Y. M. Lee et al.
APPLIED PHYSICS LETTERS (2007)
Tunnel junctions with multiferroic barriers
Martin Gajek et al.
NATURE MATERIALS (2007)
Band diagrams of spin tunneling junctions La0.6Sr0.4MnO3/Nb:SrTiO3 and SrRuO3/Nb:SrTiO3 determined by in situ photoemission spectroscopy
M. Minohara et al.
APPLIED PHYSICS LETTERS (2007)
Coexistence of bipolar and unipolar resistive switching behaviors in a Pt/TiO2/Pt stack
Doo Seok Jeong et al.
ELECTROCHEMICAL AND SOLID STATE LETTERS (2007)
Crystal structure and band gap determination of HfO2 thin films
Marie C. Cheynet et al.
JOURNAL OF APPLIED PHYSICS (2007)
Dynamically reconfigurable silicon array of spiking neurons with conductance-based synapses
R. Jacob Vogelstein et al.
IEEE TRANSACTIONS ON NEURAL NETWORKS (2007)
Extreme learning machine: Theory and applications
Guang-Bin Huang et al.
NEUROCOMPUTING (2006)
Si/TiOx/Pt/TaOx electrodes fabricated by sputtering for electrochemical ozone generation
Kazuhiro Kaneda et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2006)
Silicon CMOS devices beyond scaling
W. Haensch et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2006)
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
D. C. Kim et al.
APPLIED PHYSICS LETTERS (2006)
Resistive switching and data reliability of epitaxial (Ba,Sr)TiO3 thin films -: art. no. 042901
R Oligschlaeger et al.
APPLIED PHYSICS LETTERS (2006)
Strong electron correlation effects in nonvolatile electronic memory devices -: art. no. 033510
MJ Rozenberg et al.
APPLIED PHYSICS LETTERS (2006)
Design considerations for MRAM
TM Maffitt et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2006)
A VLSI array of low-power spiking neurons and bistable synapses with spike-timing dependent plasticity
G Indiveri et al.
IEEE TRANSACTIONS ON NEURAL NETWORKS (2006)
Wave acceleration of electrons in the Van Allen radiation belts
RB Horne et al.
NATURE (2005)
Thirty-day-long data retention in ferroelectric-gate field-effect transistors with HfO2 buffer layers
K Takahashi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2005)
Giant electroresistance in ferroelectric tunnel junctions
MY Zhuravlev et al.
PHYSICAL REVIEW LETTERS (2005)
CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices
DB Strukov et al.
NANOTECHNOLOGY (2005)
Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film
CY Liu et al.
IEEE ELECTRON DEVICE LETTERS (2005)
A highly reliable 3-D integrated SBT ferroelectric capacitor enabling FeRAM scaling
L Goux et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2005)
Retention characteristics in Bi3.25La0.75Ti3O12 thin films prepared by the polymeric precursor method -: art. no. 112909
AZ Simoes et al.
APPLIED PHYSICS LETTERS (2005)
Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition
R Fors et al.
PHYSICAL REVIEW B (2005)
Colossal electro-resistance memory effect at metal/La2CuO4 interfaces
A Sawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2005)
Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions
YM Huai et al.
APPLIED PHYSICS LETTERS (2004)
Origin of the different photoactivity of N-doped anatase and rutile TiO2 -: art. no. 085116
C Di Valentin et al.
PHYSICAL REVIEW B (2004)
Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions
S Yuasa et al.
NATURE MATERIALS (2004)
Colossal electroresistance of a Pr0.7Ca0.3MnO3 thin film at room temperature -: art. no. 224403
A Odagawa et al.
PHYSICAL REVIEW B (2004)
Metal-ferroelectric-insulator-semiconductor memory FET with long retention and high endurance
S Sakai et al.
IEEE ELECTRON DEVICE LETTERS (2004)
NR2B-containing receptors mediate cross talk among hippocampal synapses
A Scimemi et al.
JOURNAL OF NEUROSCIENCE (2004)
MOCVD of cobalt oxide thin films: dependence of growth, microstructure, and optical properties on the source of oxidation
AU Mane et al.
JOURNAL OF CRYSTAL GROWTH (2003)
Systematic trends in the electronic structure parameters of the 4d transition-metal oxides SrMO3 (M=Zr, Mo, Ru, and Rh) -: art. no. 113101
YS Lee et al.
PHYSICAL REVIEW B (2003)
Using neural network rule extraction and decision tables for credit-risk evaluation
B Baesens et al.
MANAGEMENT SCIENCE (2003)
Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments
M Bowen et al.
APPLIED PHYSICS LETTERS (2003)
Design of echo cancellation and noise elimination for speech enhancement
CC Kao
IEEE TRANSACTIONS ON CONSUMER ELECTRONICS (2003)
Limits to binary logic switch scaling - A Gedanken model
VV Zhirnov et al.
PROCEEDINGS OF THE IEEE (2003)
Why is nonvolatile ferroelectric memory field-effect transistor still elusive?
TP Ma et al.
IEEE ELECTRON DEVICE LETTERS (2002)
Adaptive CMOS: From biological inspiration to systems-on-a-chip
C Diorio et al.
PROCEEDINGS OF THE IEEE (2002)
Long term measurements of radiation belts by SAMPEX and their variations
XL Li et al.
GEOPHYSICAL RESEARCH LETTERS (2001)
Growth, structure, electronic, and magnetic properties of MgO/Fe(001) bilayers and Fe/MgO/Fe(001) trilayers
M Klaua et al.
PHYSICAL REVIEW B (2001)
Bankruptcy prediction for credit risk using neural networks: A survey and new results
AF Atiya
IEEE TRANSACTIONS ON NEURAL NETWORKS (2001)
Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals
Y Watanabe et al.
APPLIED PHYSICS LETTERS (2001)
Spin-dependent tunneling conductance of Fe|MgO|Fe sandwiches -: art. no. 054416
WH Butler et al.
PHYSICAL REVIEW B (2001)
Neural networks for short-term load forecasting: A review and evaluation
HS Hippert et al.
IEEE TRANSACTIONS ON POWER SYSTEMS (2001)
A fast and accurate face detector based on neural networks
R Feraud et al.
IEEE TRANSACTIONS ON PATTERN ANALYSIS AND MACHINE INTELLIGENCE (2001)
A compact physical via blockage model
Q Chen et al.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS (2000)
Synaptic plasticity: taming the beast
L. F. Abbott et al.
NATURE NEUROSCIENCE (2000)
Reproducible switching effect in thin oxide films for memory applications
A Beck et al.
APPLIED PHYSICS LETTERS (2000)
Band offsets of wide-band-gap oxides and implications for future electronic devices
J Robertson
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2000)
Neural networks for the prediction and forecasting of water resources variables: a review of modelling issues and applications
HR Maier et al.
ENVIRONMENTAL MODELLING & SOFTWARE (2000)