Related references
Note: Only part of the references are listed.Evidence of Crystallization-Induced Segregation in the Phase Change Material Te-Rich GST
Anthony Debunne et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2011)
Phase change memory technology
Geoffrey W. Burr et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2010)
Direct evidence of phase separation in Ge2Sb2Te5 in phase change memory devices
Cheolkyu Kim et al.
APPLIED PHYSICS LETTERS (2009)
Atomic migration in molten and crystalline Ge2Sb2Te5 under high electric field
Tae-Youl Yang et al.
APPLIED PHYSICS LETTERS (2009)
Sulfur-Induced PtSi:C/Si:C Schottky Barrier Height Lowering for Realizing N-Channel FinFETs With Reduced External Resistance
Rinus Tek-Po Lee et al.
IEEE ELECTRON DEVICE LETTERS (2009)
Degradation of the Reset Switching During Endurance Testing of a Phase-Change Line Cell
Ludovic Goux et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2009)
Phase transitions in Ge-Sb phase change materials
Simone Raoux et al.
JOURNAL OF APPLIED PHYSICS (2009)
Change of Damage Mechanism by the Frequency of Applied Pulsed DC in the Ge2Sb2Te5 Line
Tae-Youl Yang et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2009)
Bias polarity dependence of a phase change memory with a Ge-doped SbTe: A method for multilevel programing
Suyoun Lee et al.
APPLIED PHYSICS LETTERS (2008)
Direct evidence for abrupt postcrystallization germanium precipitation in thin phase-change films of Sb-15 at.% Ge
C. Cabral et al.
APPLIED PHYSICS LETTERS (2008)
Phase-change random access memory: A scalable technology
S. Raoux et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2008)
Overview of candidate device technologies for storage-class memory
G. W. Burr et al.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT (2008)
A 90 nm 1.8 V 512 Mb diode-switch PRAM with 266 MB/s read throughput
Kwang-Jin Lee et al.
IEEE JOURNAL OF SOLID-STATE CIRCUITS (2008)
Evolution of phase change memory characteristics with operating cycles: Electrical characterization and physical modeling
Joy Sarkar et al.
APPLIED PHYSICS LETTERS (2007)
Phase-change materials for rewriteable data storage
Matthias Wuttig et al.
NATURE MATERIALS (2007)
Evidence for segregation of Te in Ge2Sb2Te5 films:: Effect on the phase-change stress
L. Krusin-Elbaum et al.
APPLIED PHYSICS LETTERS (2007)
Novel lithography-independent pore phase change memory
M. Breitwisch et al.
2007 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS (2007)
Phase-change behavior of stoichiometric Ge2Sb2Te5 in phase-change random access memory
Jong-Bong Park et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2007)
Low-cost and nanoscale non-volatile memory concept for future silicon chips
MHR Lankhorst et al.
NATURE MATERIALS (2005)
Reliability study of phase-change nonvolatile memories
A Pirovano et al.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY (2004)
Introduction to Flash memory
R Bez et al.
PROCEEDINGS OF THE IEEE (2003)