Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3642980
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Funding
- National Science Foundation [DMR-0803663]
- DOE Office of Science, Materials Sciences and Engineering Division
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [0803663] Funding Source: National Science Foundation
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Epitaxial VO2 films grown by pulsed laser deposition (PLD) on c-cut sapphire substrates ((0001) Al2O3) were studied by aberration-corrected scanning transmission electron microscopy (STEM). A number of film/substrate orientation relationships were found and are discussed in the context of the semiconductor-metal transition (SMT) characteristics. A structurally and electronically modified buffer layer was revealed on the interface and was attributed to the interface free-energy minimization process of accommodating the symmetry mismatch between the substrate and the film. This interfacial transition layer is expected to affect the SMT behavior when the interfacial region is a significant fraction of the VO2 film thickness. (C) 2011 American Institute of Physics. [doi:10.1063/1.3642980]
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