Related references
Note: Only part of the references are listed.Low-temperature conductance of the weak junction in InAs nanowire in the field of AFM scanning gate
A. A. Zhukov et al.
JETP LETTERS (2011)
Vertical Surrounding Gate Transistors Using Single InAs Nanowires Grown on Si Substrates
Tomotaka Tanaka et al.
APPLIED PHYSICS EXPRESS (2010)
Doping Incorporation in InAs nanowires characterized by capacitance measurements
Gvidas Astromskas et al.
JOURNAL OF APPLIED PHYSICS (2010)
P-Doping Mechanisms in Catalyst-Free Gallium Arsenide Nanowires
Joseph Dufouleur et al.
NANO LETTERS (2010)
Correlating the Nanostructure and Electronic Properties of InAs Nanowires
M. D. Schroer et al.
NANO LETTERS (2010)
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors
C. Thelander et al.
NANOTECHNOLOGY (2010)
Spin-orbit qubit in a semiconductor nanowire
S. Nadj-Perge et al.
NATURE (2010)
Spin-orbit coupling and phase coherence in InAs nanowires
S. Estevez Hernandez et al.
PHYSICAL REVIEW B (2010)
Predicted band structures of III-V semiconductors in the wurtzite phase
A. De et al.
PHYSICAL REVIEW B (2010)
Control of III-V nanowire crystal structure by growth parameter tuning
Kimberly A. Dick et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2010)
Structural and Room-Temperature Transport Properties of Zinc Blende and Wurtzite InAs Nanowires
Shadi A. Dayeh et al.
ADVANCED FUNCTIONAL MATERIALS (2009)
Diameter-dependent conductance of InAs nanowires
Marc Scheffler et al.
JOURNAL OF APPLIED PHYSICS (2009)
Controllable p-type doping of GaAs nanowires during vapor-liquid-solid growth
Christoph Gutsche et al.
JOURNAL OF APPLIED PHYSICS (2009)
Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N2 carrier gas
M. Akabori et al.
JOURNAL OF CRYSTAL GROWTH (2009)
Diameter-Dependent Electron Mobility of InAs Nanowires
Alexandra C. Ford et al.
NANO LETTERS (2009)
Electrical transport properties of single undoped and n-type doped InN nanowires
T. Richter et al.
NANOTECHNOLOGY (2009)
Donor deactivation in silicon nanostructures
Mikael T. Bjork et al.
NATURE NANOTECHNOLOGY (2009)
Transport Coefficients of InAs Nanowires as a Function of Diameter
Shadi A. Dayeh et al.
SMALL (2009)
Temperature dependence of the phase-coherence length in InN nanowires
Ch. Bloemers et al.
APPLIED PHYSICS LETTERS (2008)
Development of a Vertical Wrap-Gated InAs FET
Claes Thelander et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Toward Nanowire Electronics
Joerg Appenzeller et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2008)
Selective-area growth of GaAs and InAs nanowires-homo- and heteroepitaxy using SiNx templates
H. Paetzelt et al.
JOURNAL OF CRYSTAL GROWTH (2008)
Flux quantization effects in InN nanowires
Thomas Richter et al.
NANO LETTERS (2008)
Crystallographic structure of InAs nanowires studied by transmission electron microscopy
Katsuhiro Tomioka et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS (2007)
Electrical characterizations of InGaAs nanowire-top-gate field-effect transistors by selective-area metal organic vapor phase epitaxy
Jinichiro Noborisaka et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2007)
High transconductance MISFET with a single InAs nanowire channel
Q.-T. Do et al.
IEEE ELECTRON DEVICE LETTERS (2007)
Single electron pumping in InAs nanowire double quantum dots
A. Fuhrer et al.
APPLIED PHYSICS LETTERS (2007)
GaN and InN nanowires grown by MBE: A comparison
R. Calarco et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2007)
Remote p-doping of InAs nanowires
H.-Y. Li et al.
NANO LETTERS (2007)
Strain mapping in free-standing heterostructured wurtzite InAs/InP nanowires
Magnus W. Larsson et al.
NANOTECHNOLOGY (2007)
Growth of highly uniform InAs nanowire arrays by selective-area MOVPE
K. Tomioka et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE
Keitaro Ikejiri et al.
JOURNAL OF CRYSTAL GROWTH (2007)
Ionization energy of donor and acceptor impurities in semiconductor nanowires: Importance of dielectric confinement
Mamadou Diarra et al.
PHYSICAL REVIEW B (2007)
Model GW band structure of InAs and GaAs in the wurtzite phase
Z. Zanolli et al.
PHYSICAL REVIEW B (2007)
Top-gate defined double quantum dots in InAs nanowires
A. Pfund et al.
APPLIED PHYSICS LETTERS (2006)
Semiconductor nanowires
Wei Lu et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2006)
Nanowire-based one-dimensional electronics
C. Thelander et al.
MATERIALS TODAY (2006)
Gate capacitance of back-gated nanowire field-effect transistors
Olaf Wunnicke
APPLIED PHYSICS LETTERS (2006)
Supercurrent reversal in quantum dots
Jorden A. Van Dam et al.
NATURE (2006)
Vertical wrap-gated nanowire transistors
T Bryllert et al.
NANOTECHNOLOGY (2006)
Tunable double quantum dots in InAs nanowires defined by local gate electrodes
C Fasth et al.
NANO LETTERS (2005)
Single-electron tunneling in InP nanowires
S De Franceschi et al.
APPLIED PHYSICS LETTERS (2003)
Properties of InAs/InAlAs heterostructures
C Affentauschegg et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2001)
Band parameters for III-V compound semiconductors and their alloys
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2001)
Four-terminal resistance of a ballistic quantum wire
R de Picciotto et al.
NATURE (2001)