Related references
Note: Only part of the references are listed.Surface passivation of crystalline silicon by plasma-enhanced chemical vapor deposition double layers of silicon-rich silicon oxynitride and silicon nitride
Johannes Seiffe et al.
JOURNAL OF APPLIED PHYSICS (2011)
Very low surface recombination velocity on p-type c-Si by high-rate plasma-deposited aluminum oxide
Pierre Saint-Cast et al.
APPLIED PHYSICS LETTERS (2009)
Model for a-Si:H/c-Si interface recombination based on the amphoteric nature of silicon dangling bonds
Sara Olibet et al.
PHYSICAL REVIEW B (2007)
Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge
G. Agostinelli et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2006)
Electronic states in a-Si:H/c-Si heterostructures
L. Korte et al.
JOURNAL OF NON-CRYSTALLINE SOLIDS (2006)
Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping
DH Macdonald et al.
JOURNAL OF APPLIED PHYSICS (2004)
Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon
T Trupke et al.
JOURNAL OF APPLIED PHYSICS (2003)
General parameterization of Auger recombination in crystalline silicon
MJ Kerr et al.
JOURNAL OF APPLIED PHYSICS (2002)
Surface passivation of p-type crystalline Si by plasma enhanced chemical vapor deposited amorphous SiCx:H films
I Martín et al.
APPLIED PHYSICS LETTERS (2001)
Coulomb-enhanced Auger recombination in crystalline silicon at intermediate and high-injection densities
J Schmidt et al.
JOURNAL OF APPLIED PHYSICS (2000)