Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3641983
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Funding
- National Natural Science Foundation of China [51002071]
- Chinese Ministry of Education [Z2009-1-01036]
- Natural Science Foundation of Inner Mongolia [2010BS0802]
- State Key Laboratory of New Ceramic and Fine Processing
- Xinjiang Key Laboratory of Electronic Information Materials and Devices [XJYS0901-2011-01]
- Tsinghua University
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(100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O-3 (PLZT) antiferroelectric films with a thickness of about 1.7 mu m were deposited on Pt-buffered silicon substrates via a sol-gel process. The room-temperature capacitance density of the films was above 195 nF/cm(2) over the frequency range from 1 kHz to 1 MHz. The recoverable energy density was enlarged with increasing measurement field, and a maximum value of 12.4 J/cm(3) at 1120 kV/cm was obtained at room temperature. From the temperature-dependent electric-field-induced polarization hysteresis loops, a maximum reversible adiabatic temperature change, Delta T = 8.5 degrees C, was obtained near the phase-transition temperature. (C) 2011 American Institute of Physics. [doi:10.1063/1.3641983]
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