Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3606582
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Funding
- European Commission [227579]
- Finnish Centre of Excellence in Computational Molecular Science (CMS)
- Academy of Finland
- University of Helsinki
- European Communitie under Association between EURATOM and CCFE
- RCUK [EP/I501045]
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We examine a possible mechanism for the formation of protrusions on a metallic surface held in a sufficiently high electric field in the presence of a near-surface void. By means of molecular dynamics simulations we show that the high tensile stress exerted on a Cu {110} surface with a near-surface void can promote the nucleation of dislocations on the void surface. These dislocations cause slip along {111} crystallographic planes leading to mass transport in the volume above the void. We find a linear correlation between the radius of the void and the maximum depth for the growth to occur. (C) 2011 American Institute of Physics. [doi:10.1063/1.3606582]
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