Journal
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3537832
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- National Science Council of Taiwan [NSC 96-2112-M-003-015-MY3, NSC 99-2738-M-003-001, NSC 99-2112-M-003-009-MY3]
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Low temperature (LT: 100 K) deposition of Fe on Si(111)7 x 7 surface effectively reduces Fe-silicide formation at the Fe/Si interface, as compared with conventional room temperature (RT) growth. The interface condition of 5-15 monolayers (ML) LT-Fe/Si(111) remains stable at least up to 350 K. Si segregation was observed after annealing at 400 K. LT-grown Fe films also reveal a relatively flat surface morphology with a roughness of 0.4-0.6 nm. Thus, LT-Fe films were suggested as an intermediate layer for the subsequent RT-growth of Fe. We use a single domain model of magnetic anisotropy to fit the magnetic coercivity evolution of n ML RT-Fe on 5 ML LT-Fe/Si(111). Accordingly, we deduce the surface and volume-contributed magnetic anisotropy for discussion. (c) 2011 American Institute of Physics. [doi: 10.1063/1.3537832]
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