Oxygen rich p-type ZnO thin films using wet chemical route with enhanced carrier concentration by temperature-dependent tuning of acceptor defects

This paper reports the temperature-dependent tailoring of acceptor defects in oxygen rich ZnO thin films, for enhanced p-type conductivity. The oxygen rich p-type ZnO thin films were successfully grown by pulsed laser deposition on silicon substrate at different postdeposition annealing temperatures (500-800 degrees C). The oxygen rich ZnO powder was synthesized by wet chemical method using zinc acetate dihydrate [Zn(CH3COO)(2)center dot 2H(2)O] and potassium hydroxide (KOH) as precursors. The powder was then compressed and sintered to make pellets for pulsed laser deposition system. The x-ray diffraction analysis exhibits an improved crystallinity in thin films annealed at elevated temperatures with a temperature-dependent variation in lattice constants. An analysis of Auger Zn L3M4,5M4,5 peak reveals a consistent decrease in interstitial zinc (Zn-i) exhibiting its temperature-dependent reversion to zinc lattice sites. Room temperature photoluminescence of the p-type ZnO shows a dominant deep level emission peak at similar to 3.12 eV related to oxygen interstitials (acceptors). The relative concentration of oxygen interstitials (O-i) increases with increase in annealing temperature, resulting in enhanced hole carrier concentration. The maximum hole carrier concentration of 6.8 x 10(14) cm(-3) (indicating p-type conductivity) was estimated using Hall probe measurements for the thin film sample annealed at 700 degrees C. (C) 2011 American Institute of Physics. [doi:10.1063/1.3660284]