Journal
JOURNAL OF APPLIED PHYSICS
Volume 110, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3656444
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Funding
- National Natural Science Foundation of China [51002131]
- Key Laboratory of Advanced Display and System Applications
- Ministry of Education (Shanghai University) [P201003]
- State Key Laboratory of Silicon Materials (Zhejiang University) [SKL2010-9]
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We propose a specifically designed structure to fabricate thin-film transistors using amorphous indium-gallium-zinc-oxide (a-IGZO) films as the active channel layers. The I-shaped gate electrode is employed to define the channel width, reducing overlaps between the gate and source/drain electrodes. The devices with such a structure exhibit acceptable electrical performance and stability after annealing treatment. The XPS data show that the as-deposited a-IGZO film has not a very dense structure that may induce shallow traps. A shallow trap model is proposed to explain the large threshold voltage shifts of the as-deposited device. Annealing treatment can eliminate these shallow traps and improve the device stability. (C) 2011 American Institute of Physics. [doi:10.1063/1.3656444]
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