Journal
JOURNAL OF APPLIED PHYSICS
Volume 109, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3573537
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- Korean Government [2010-0014418]
- Ministry of Education, Science and Technology [NRF20100020209]
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The influence of two different SiO(2) and polymethylmethacrylate (PMMA) gate dielectrics on the performance of single-layered organic field-effect transistors and bi-layered organic light-emitting field-effect transistors was examined. Organic active layers of p-type alpha,omega-dihexylsexithiophene and n-type N,N'-ditridecylperylene-3,4,9,10-tetracarboxylic diimide were prepared using the neutral cluster beam deposition method. Characterization of surface morphology, contact angles, structural properties and temperature dependence of field-effect mobilities measured over the temperature range of 10-300 K revealed that compared to the SiO(2) dielectrics, the hydroxyl-free PMMA dielectrics provided better conditions for crystalline film growth. The PMMA-based device characteristics exhibited excellent field-effect mobilities, stress-free operational stability, and electroluminescence through efficient carrier transport and well-balanced ambipolarity under ambient conditions. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3573537]
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