Related references
Note: Only part of the references are listed.Theory of single electron spin relaxation in Si/SiGe lateral coupled quantum dots
Martin Raith et al.
PHYSICAL REVIEW B (2011)
Hubbard model description of silicon spin qubits: Charge stability diagram and tunnel coupling in Si double quantum dots
S. Das Sarma et al.
PHYSICAL REVIEW B (2011)
Charge sensing in intrinsic silicon quantum dots
G. J. Podd et al.
APPLIED PHYSICS LETTERS (2010)
Fast tunnel rates in Si/SiGe one-electron single and double quantum dots
Madhu Thalakulam et al.
APPLIED PHYSICS LETTERS (2010)
Electrostatically defined quantum dots in a Si/SiGe heterostructure
A. Wild et al.
NEW JOURNAL OF PHYSICS (2010)
Singlet-triplet relaxation in multivalley silicon single quantum dots
L. Wang et al.
PHYSICAL REVIEW B (2010)
Pauli spin blockade and lifetime-enhanced transport in a Si/SiGe double quantum dot
C. B. Simmons et al.
PHYSICAL REVIEW B (2010)
Quantum dot spin qubits in silicon: Multivalley physics
Dimitrie Culcer et al.
PHYSICAL REVIEW B (2010)
Exchange coupling in silicon quantum dots: Theoretical considerations for quantum computation
Qiuzi Li et al.
PHYSICAL REVIEW B (2010)
Measurement of the Spin Relaxation Time of Single Electrons in a Silicon Metal-Oxide-Semiconductor-Based Quantum Dot
M. Xiao et al.
PHYSICAL REVIEW LETTERS (2010)
Spin relaxation in silicon coupled quantum dots
Wei Pan et al.
APPLIED PHYSICS LETTERS (2009)
Electrostatically defined few-electron double quantum dot in silicon
W. H. Lim et al.
APPLIED PHYSICS LETTERS (2009)
Realizing singlet-triplet qubits in multivalley Si quantum dots
Dimitrie Culcer et al.
PHYSICAL REVIEW B (2009)
Physical mechanisms of interface-mediated intervalley coupling in Si
A. L. Saraiva et al.
PHYSICAL REVIEW B (2009)
Electron spin blockade and singlet-triplet transition in a silicon single electron transistor
Binhui Hu et al.
PHYSICAL REVIEW B (2009)
Spin blockade and lifetime-enhanced transport in a few-electron Si/SiGe double quantum dot
Nakul Shaji et al.
NATURE PHYSICS (2008)
Singlet-triplet relaxation in two-electron silicon quantum dots
M. Prada et al.
PHYSICAL REVIEW B (2008)
Multiscale theory of valley splitting in the conduction band of a quantum well
Sucismita Chutia et al.
PHYSICAL REVIEW B (2008)
Electric field effect on electron spin splitting in SiGe/Si quantum wells
M. O. Nestoklon et al.
PHYSICAL REVIEW B (2008)
Pauli-spin-blockade transport through a silicon double quantum dot
H. W. Liu et al.
PHYSICAL REVIEW B (2008)
Triplet-singlet relaxation in semiconductor single and double quantum dots
K. Shen et al.
PHYSICAL REVIEW B (2007)
Spins in few-electron quantum dots
R. Hanson et al.
REVIEWS OF MODERN PHYSICS (2007)
Interdot coupling in a Si-based coupled double dot system for spin qubit gate
S. J. Shin et al.
APPLIED PHYSICS LETTERS (2007)
Relaxation, dephasing, and quantum control of electron spins in double quantum dots
J. M. Taylor et al.
PHYSICAL REVIEW B (2007)
Valley splitting theory of SiGe/Si/SiGe quantum wells
Mark Friesen et al.
PHYSICAL REVIEW B (2007)
Magnetic field dependence of triplet-singlet relaxation in quantum dots with spin-orbit coupling
Juan I. Climente et al.
PHYSICAL REVIEW B (2007)
Fault-tolerant architecture for quantum computation using electrically controlled semiconductor spins
JM Taylor et al.
NATURE PHYSICS (2005)
Spin relaxation in GaAs quantum dots -: art. no. 115318
JL Cheng et al.
PHYSICAL REVIEW B (2004)
Valley splitting in strained silicon quantum wells
TB Boykin et al.
APPLIED PHYSICS LETTERS (2004)
Analytic band Monte Carlo model for electron transport in Si including acoustic and optical phonon dispersion
E Pop et al.
JOURNAL OF APPLIED PHYSICS (2004)
Electron transport through double quantum dots
WG van der Wiel et al.
REVIEWS OF MODERN PHYSICS (2003)
Electronic structure of quantum dots
SM Reimann et al.
REVIEWS OF MODERN PHYSICS (2002)
Share Paper
