4.6 Article

Orientation-dependent phase switching process and strains of Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O3 antiferroelectric thin films

Journal

JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 11, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.3407567

Keywords

antiferroelectric materials; lanthanum compounds; lead compounds; magnetic thin films; magnetic transitions; sol-gel processing

Funding

  1. Ministry of Sciences and Technology of China [2009CB623302]
  2. Chinese Ministry of Education
  3. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Wuhan University of Technology) [2010-KF-5]
  4. Research Fund for Higher Education of Inner Mongolia [NJ09080]
  5. National Natural Science Foundation of China [60806039]

Ask authors/readers for more resources

Highly (100) and (111)-oriented Pb0.97La0.02(Zr0.85Sn0.13Ti0.02)O-3 antiferroelectric (AFE) thin films were fabricated through a sol-gel processing. The effects of orientation on phase transformation behaviors and strains of the AFE thin films were studied systemically. As compared to (100)-preferred AFE thin films, the (111)-oriented films showed a smaller forward phase switching field of 250 kV/cm and higher stains of 0.79%. It is therefore concluded that AFE thin films with (111)-preferred orientation are more suitable to be used as microactuators. (c) 2010 American Institute of Physics. [doi:10.1063/1.3407567]

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.6
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available