Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3330753
Keywords
barium compounds; cerium compounds; crystal microstructure; current density; dielectric losses; dysprosium compounds; ferroelectric thin films; ferroelectric transitions; lanthanum compounds; leakage currents; permittivity; relaxor ferroelectrics; zirconium compounds
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Funding
- Ministry of Sciences and Technology of China [2009CB623302]
- Shanghai Committee of Science and Technology [07DZ22302]
- Specialized Research Fund for the Doctoral Program of Higher Education [SRFDP20060247003]
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Ba(1-3/2x)MxZr0.20Ti0.80O3 (M=La, Ce, and Dy; x=0, 0.005, 0.01, 0.02, and 0.05) thin films are successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates by the sol-gel method, and the influence of the rare-earth ions content on the microstructure, dielectric properties, and phase transformation behavior is investigated in detail. As a result, the rare-earth ions with various ionic radii enter the perovskite lattice to substitute for A-site Ba2+ ions and inhibit the grain growth. With the increase in rare-earth ions concentration, the dielectric constant, dielectric loss, tunability, and leakage current density of Ba(1-3/2x)MxZr0.20Ti0.80O3 thin films decreased. Simultaneously the temperature of maximum of dielectric constant shifts to the lower temperature and relaxor phase transition behavior is observed due to the rare-earth ions substitution. And the degree of the relaxor behavior is enhanced with the increase in rare-earth ions content and ionic radius.
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