Photoluminescence enhancement and high gain amplification of ErxY2-xSiO5 waveguide

ErxY2-xSiO5 (x=0-2) films have been fabricated on Si(100) substrates by the sol-gel method. Enhanced Er3+ photoluminescence of around 30 times for the ErxY2-xSiO5 (x=0.1) film was observed compared with pure Er2SiO5 film at the wavelength pump of 654 nm. Reduced upconversion effect and decreased nonradiative transient rate are two main reasons for the enhanced Er3+ luminescence in the new film of ErxY2-xSiO5. Above 10 dB optical gain can be achieved at the 1 mm length ErxY2-xSiO5 (x=0.1) waveguide under 30 mW pumping power, indicating it is sought candidate material for compact waveguide amplifiers and emitters in silicon photonics integration. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3446822]