Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3294650
Keywords
carrier density; carrier mobility; carrier relaxation time; Hall effect; II-VI semiconductors; MOCVD; optical conductivity; semiconductor epitaxial layers; semiconductor growth; terahertz wave spectra; wide band gap semiconductors; zinc compounds
Categories
Funding
- A*STAR SERC of Singapore [082 141 0039]
Ask authors/readers for more resources
Using terahertz time-domain spectroscopy, we measured the frequency dependent complex dielectric response and conductivity of n-type single-crystal ZnO epilayers with different carrier concentrations over the frequency range from 0.1 to 3.0 THz. The measured complex dielectric response and conductivity are analyzed using Drude model.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
