Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3327434
Keywords
aluminium; contact resistance; erbium; field effect transistors; gallium arsenide; III-V semiconductors; indium compounds; Schottky barriers; titanium; tungsten; work function; yttrium
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Funding
- Focus Center Research Program (FCRP) (MSD)
- Intel Corporation
- NSF [ECS-0501096]
- Intel
- Stanford Graduate Fellowship
- National Defense Science and Engineering Graduate Fellowship
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In this work, we introduce a novel nonalloyed contact structure for n-GaAs and n-In0.53Ga0.47As by using single metals in combination with a thin dielectric to tune the effective metal/III-V work function toward the conduction band edge. We reduced the effective Schottky barrier height (Phi(B,eff)) of Al/GaAs from 0.75 to 0.17 eV through the use of a thin atomic layer deposition Al2O3. Barrier height reduction was verified for a variety of metals (Y, Er, Al, Ti, and W) through direct measurements and deduced from increased diode current and reduced contact resistance. Similar results were observed on n-In0.53Ga0.47As. Two possible underlying mechanisms are discussed: one based on the formation of a dielectric dipole and the other based on the blocking of metal induced gap states. This structure has applications as a nonalloyed low resistance ohmic contact for III-V metal-oxide-semiconductor field-effect transistors (MOSFETs) or high electron mobility transistors (HEMTs), and as a near zero barrier height contact for III-V Schottky barrier field-effect transistors or diodes.
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