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JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3372757
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We report here a detailed study about the formation and self-organization of nanoscale structures during ion beam implantation at room temperature of 300 keV Ge+ in Ge as a function of the ion fluence in the range between 1 x 10(14) to 4 x 10(16) cm(-2). Microexplosions characterize the morphology of the swelled material; a random cellular structure consisting of cells surrounded by amorphous Ge ripples has been observed and studied in details by combining atomic force microscopy, scanning electron microscopy, and transmission electron microscopy. c 2010 American Institute of Physics. [doi: 10.1063/1.3372757]
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