Electrical characteristics of DNA-based metal-insulator-semiconductor structures

High quality sandwich device was fabricated from wheat DNA molecular film by solution processing located between Au and n-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current voltage (I-V) and capacitance voltage (C-V) at room temperature. DNA-based on this structure showed an excellent rectifying behavior with a typical ideality factor of 1.22, and that DNA film increased the effective barrier height by influencing the space charge region of Si. We proposed that DNA could be an insulatorlike material with a wide optical band energy gap of 4.19 eV from its optical absorbance characteristics. Additionally, the energy distribution of interface state density, determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height, decreases exponentially with bias from 7.48 x 10(15) m(-2) eV(-1) in (E(c)-0.40) eV to 8.56 x 10(14) m(-2) eV(-1) in (E(c)-0.72) eV. (C) 2010 American Institute of Physics. [doi:10.1063/1.3447985]