Journal
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3517138
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Funding
- Spanish Ministry of Education [MAT2008-04815, CSD2006-19, CSD2009-00013]
- Community of Madrid [P2009/ESP1503]
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We report on molecular beam epitaxy growth and characterization of ten-period lattice-matched InAlN/GaN distributed Bragg reflectors (DBRs), with peak reflectivity centered around 400 nm. Thanks to the well tuned ternary alloy composition, crack-free surfaces have been obtained, as confirmed by both optical and transmission electron microscopy (TEM). Their good periodicity and well-defined interfaces have been confirmed by both x-ray diffraction and TEM measurements. Peak reflectivity values as high as 60% with stop bands of 30 nm have been demonstrated. Optical measurements revealed that discrepancy between the obtained (60%) and the theoretically expected (similar to 75%) reflectivity is a consequence of significant residual absorption (similar to 35%). TEM measurements revealed the coexistence of zinc-blende and wurtzite phases, as well as planar defects, mainly in GaN. These defects are suggested as the potential source of the undesired absorption and/or scattering effects that lowered the DBRs' peak reflectivity. c 2010 American Institute of Physics. [doi:10.1063/1.3517138]
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