Journal
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3488623
Keywords
carrier relaxation time; electron-phonon interactions; nanowires; quantum dots
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Funding
- Natural Science Foundation of China [10725417]
- National Basic Research Program of China [2006CB922005]
- Chinese Academy of Sciences
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Electron spin relaxation in nanowire-based quantum dots induced by confined phonons is investigated theoretically. Due to the one-dimensional nature of the confined phonons, the van Hove singularities of the confined phonons and the zero of the form factor of the electron-phonon coupling can lead to unique features of the spin relaxation rate. Extremely strong spin relaxation can be obtained at the van Hove singularity. Meanwhile the spin relaxation rate can also be greatly suppressed at the zero of the form factor. This feature indicates the flexibility of nanowire-based quantum dots in the manipulation of spin states. It also offers a way to probe the property of the confined phonons. (C) 2010 American Institute of Physics. [doi:10.1063/1.3488623]
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