Journal
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3457839
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Funding
- National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency (NSTDA)
- National Research University
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We investigate the film-growth process of the inhomogeneous sputtered TiO2 thin films by the in situ real-time spectroscopic ellipsometer. The growth process of the film is analyzed by both the uniform and the island film growth models. Based on the analyses from the Psi-Delta trajectories, the initial thin-film growth corresponds to the island film growth model for a single-layer film. As the film grows, the microstructural phase changes cause the transition from the single-to the double-layer physical model, because of the development of the inhomogeneity in the TiO2 thin film. The dynamic fits with the double-layer physical model and the Cody-Lorentz optical model indicate three different stages of the film growth: the nucleation stage, the coalescence stage, and the continuous-layer stage. Although our presented model works well for most of the experimental data, the determination of the refractive index at the ultrathin thickness may be problematic. (C) 2010 American Institute of Physics. [doi:10.1063/1.3457839]
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