Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3431353
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- Brazilian FAPEAM (Fundacao de Amparo a Pesquisa do Estado do Amazonas)
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Hot carriers in a doped graphene under dc electric field is described taking into account the intraband energy relaxation due to acoustic phonon scattering and the interband generation-recombination transitions caused by thermal radiation. The consideration is performed for the case when the intercarrier scattering effectively establishes the quasiequilibrium electron-hole distributions, with effective temperature and concentrations of carriers. The concentration and energy balance equations are solved taking into account an interplay between weak energy relaxation and generation-recombination processes. The nonlinear conductivity is calculated for the momentum relaxation caused by the elastic scattering. The current-voltage characteristics, and the transition between bipolar and monopolar regimes of conductivity are obtained and analyzed, for different temperatures and gate voltages. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3431353]
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