Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 6, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3340826
Keywords
aluminium compounds; gallium compounds; high electron mobility transistors; III-V semiconductors; sapphire; semiconductor device models; silicon compounds; tunnelling; wide band gap semiconductors
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The high gate leakage of AlGaN/GaN HEMTs grown on sapphire/SiC substrates having x=0.2, AlGaN thickness of 30 nm, and zero drain-source bias was earlier explained using the thermionic trap-assisted tunneling model. In the present work, we show that the same model can explain the gate leakage in AlGaN/GaN HEMTs grown on silicon substrates, having aluminum compositions of 24%, 26%, and 31%, AlGaN thickness of 20 nm, and drain-source bias (V(DS)) of 10 V, over the gate-source voltages above threshold.
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