Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3273388
Keywords
bismuth compounds; epitaxial layers; ferroelectric capacitors; ferroelectric thin films; ferroelectric transitions; finite element analysis; insulating thin films; relaxor ferroelectrics; strontium compounds; transmission electron microscopy; X-ray diffraction
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Funding
- The Aerospace Corporation's Independent Research and Development Program
- National Science Foundation [DMR-0507146, DMR-0820404]
- U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [W-31-109-ENG-38, DE-AC02-06CH11357]
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An n=7 Aurivillius phase, Sr4Bi4Ti7O24, with c=6.44 nm, was synthesized as an epitaxial (001)-oriented film. This phase and its purity were confirmed by x-ray diffraction and transmission electron microscopy. The material is ferroelectric, with a P-r=5.3 mu C/cm(2) oriented in the (001) plane and a paraelectric-to-ferroelectric transition temperature of T-C=324 K. Some indications of relaxorlike behavior are observed. Such behavior is out of character for Srn-1Bi2TinO3n+3 Aurivillius phases and is closer to the bulk behavior of doped SrTiO3, implying a spatial limit to the elastic interlayer interactions in these layered oxides. A finite-element solution to the interpretation of data from interdigitated capacitors on thin films is also described.
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