Journal
JOURNAL OF APPLIED PHYSICS
Volume 107, Issue 12, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.3436567
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- AFOSR [FA9550-09-1-0566]
- University of California
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We report on infrared (IR) absorption and dc electrical measurements of thin films of poly(3-hexylthiophene) (P3HT) that have been modified by a fluoroalkyl trichlorosilane (FTS). Spectra for FTS-treated films were compared to data for electrostatically-doped P3HT in an organic field-effect transistor (OFET). The appearance of a prominent polaron band in mid-IR absorption data for FTS-treated P3HT supports the assertion of hole doping via a charge-transfer process between FTS molecules and P3HT. In highly-doped films with a significantly enhanced polaron band, we find a monotonic Drude-type absorption in the far-IR, signifying delocalized states. Utilizing a simple capacitor model of an OFET, we extracted a carrier density for FTS-treated P3HT from the spectroscopic data. With carrier densities reaching 10(14) holes/cm(2), our results demonstrate that FTS doping provides a unique way to study the metal-insulator transition in polythiophenes. (C) 2010 American Institute of Physics. [doi:10.1063/1.3436567]
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